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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KU80C186EC2016-bit high-integration embedded processor. 20 MHz, 5 VIntel-CorporationPQFP1000°C70°C790 K
KU80C186EC2016-bit high-integration embedded processor. 20 MHz, 5 VIntel-CorporationPQFP1000°C70°C790 K
KU80C186EC2016-bit high-integration embedded processor. 20 MHz, 5 VIntel-CorporationPQFP1000°C70°C790 K
KU80C186EC2516-bit high-integration embedded processor. 25 MHz, 5 VIntel-CorporationPQFP1000°C70°C790 K
KU80C186EC2516-bit high-integration embedded processor. 25 MHz, 5 VIntel-CorporationPQFP1000°C70°C790 K
M38C37ECMFPSingle-chip 8-bit CMOS microcomputer. PROM 49152 bytes, RAM 1024 bytes. One time PROM version.Mitsubishi-Electric-Corporation-Semiconductor-GroupPlastic QFP80-20°C85°C881 K
M38C37ECMFSSingle-chip 8-bit CMOS microcomputer. PROM 49152 bytes, RAM 1024 bytes. EPROM version.Mitsubishi-Electric-Corporation-Semiconductor-GroupCeramic LCC80-20°C85°C881 K
S80C186EC1316-bit high-integration embedded processor. 13 MHz, 5 VIntel-CorporationQFP1000°C70°C790 K
S80C186EC2016-bit high-integration embedded processor. 20 MHz, 5 VIntel-CorporationQFP1000°C70°C790 K
S80C186EC2516-bit high-integration embedded processor. 25 MHz, 5 VIntel-CorporationQFP1000°C70°C790 K
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