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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EC-10N16N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO3P3-55°C150°C227 K
EC-10N16N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO2473-55°C150°C227 K
EC-10N16N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO33-55°C150°C227 K
EC-10P16P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO2473-55°C150°C227 K
EC-10P16P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.distributorTO3P3-55°C150°C227 K
MT5C6408EC-12L/883C8K x 8 SRAM memory arraydistributorLCC28-55°C125°C100 K
MT5C6408EC-12L/XT8K x 8 SRAM memory arraydistributorLCC28-55°C125°C100 K
MT5C6408EC-15L/883C8K x 8 SRAM memory arraydistributorLCC28-55°C125°C100 K
MT5C6408EC-15L/XT8K x 8 SRAM memory arraydistributorLCC28-55°C125°C100 K
REC-1005SRWL10W DC/DC converter with 10V input, 5/2000mA outputdistributorDIL6-25°C70°C82 K
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