| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1107 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 39 K |
| F1108 | 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 41 K |
| F1116 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 42 K |
| F1120 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 44 K |
| F1170 | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 43 K |
| F1174 | 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 45 K |
| MRF1150MA | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 150 K |
| MRF1150MA | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 150 K |
| MRF1150MB | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 146 K |
| XC2V3000-5FF1152I | Virtex-II 1.5V field programmable gate array. | distributor | - | 1152 | -40°C | 100°C | 127 K |
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