| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF1102 | 7 V, dual N-channel dual gate MOS-FET | Philips-Semiconductors | SOT | 6 | - | - | 154 K |
| DSF11060SG55 | 5500V fast recovery diode | distributor | - | - | - | - | 48 K |
| DSF11060SG56 | 5600V fast recovery diode | distributor | - | - | - | - | 48 K |
| DSF11060SG58 | 6800V fast recovery diode | distributor | - | - | - | - | 48 K |
| DSF11060SG60 | 6000V fast recovery diode | distributor | - | - | - | - | 48 K |
| IRF1104 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A. | International-Rectifier | - | 3 | -55°C | 175°C | 101 K |
| SF11-T3 | Reverse voltage: 50.00V; 1.0A super-fast rectifier | distributor | - | 2 | -65°C | 125°C | 46 K |
| SF11-T3 | Reverse voltage: 50.00V; 1.0A super-fast rectifier | distributor | - | 2 | -65°C | 125°C | 46 K |
| SF11-T3 | Reverse voltage: 50.00V; 1.0A super-fast rectifier | distributor | - | 2 | -65°C | 125°C | 46 K |
| SF11-TB | Reverse voltage: 50.00V; 1.0A super-fast rectifier | distributor | - | 2 | -65°C | 125°C | 46 K |
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