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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IF1330N-Channel silicon junction field-effect transistordistributor-3--59 K
IF1331N-Channel silicon junction field-effect transistordistributor-4--62 K
IRF130Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14AInternational-Rectifier-3-55°C150°C147 K
IRF1310NHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.International-Rectifier-3-55°C175°C96 K
IRF1310NSHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.International-RectifierDDPak3-55°C175°C156 K
MRF1345 W, N-channel MOS broadband RF power FETM-A-COM---manufacturer-of-RF-4--208 K
MRF13615 W, N-channel MOS broadband RF power FETM-A-COM---manufacturer-of-RF-4--340 K
MRF136Y30 W, N-channel MOS broadband RF power FETM-A-COM---manufacturer-of-RF-4--221 K
MRF13730 W, N-channel MOS broadband RF power FETM-A-COM---manufacturer-of-RF-4--213 K
SF13-TBReverse voltage: 150.00V; 1.0A super-fast rectifierdistributor-2-65°C125°C46 K
SF13-TBReverse voltage: 150.00V; 1.0A super-fast rectifierdistributor-2-65°C125°C46 K
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