Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IF1330 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 59 K |
IF1331 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 62 K |
IRF130 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
IRF1310N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | - | 3 | -55°C | 175°C | 96 K |
IRF1310NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 156 K |
MRF134 | 5 W, N-channel MOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 208 K |
MRF136 | 15 W, N-channel MOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 340 K |
MRF136Y | 30 W, N-channel MOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 221 K |
MRF137 | 30 W, N-channel MOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 213 K |
SF13-TB | Reverse voltage: 150.00V; 1.0A super-fast rectifier | distributor | - | 2 | -65°C | 125°C | 46 K |
SF13-TB | Reverse voltage: 150.00V; 1.0A super-fast rectifier | distributor | - | 2 | -65°C | 125°C | 46 K |
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