| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1401 | 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 42 K |
| F1410 | 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 6 | -65°C | 150°C | 36 K |
| F1415 | 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 39 K |
| F1427 | 250 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 41 K |
| F1430 | 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 38 K |
| IF140 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 92 K |
| IF140A | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 92 K |
| IF142 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 63 K |
| OPF1402 | High speed fiber optic transmitter | distributor | - | 8 | -40°C | 85°C | 482 K |
| OPF1404 | High speed fiber optic transmitter | distributor | - | 8 | -40°C | 85°C | 482 K |
| << [22] [23] [24] [25] [26] 27 [28] [29] [30] [31] [32] >> |
|---|
