| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRF1404 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | - | 3 | -55°C | 175°C | 107 K |
| IRF1404L | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | - | 3 | -55°C | 175°C | 306 K |
| IRF1404S | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 306 K |
| MRF140 | 150 W, N-channel MOS linear RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 204 K |
| MRF141 | 150 W, N-channel MOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 205 K |
| MRF141G | 300 W, N-channel MOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 5 | - | - | 220 K |
| MRF148A | 30 W, N-channel MOS linear RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 169 K |
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