| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 269-A-120-F1480-A | 1480 nm pump laser module. A - nonisolated,SMF. Operating power 120 mW. A = no connector. | distributor | Butterffly package | 14 | 0°C | 75°C | 85 K |
| 269-A-120-F1480-A | 1480 nm pump laser module. A - nonisolated,SMF. Operating power 120 mW. A = no connector. | distributor | Butterffly package | 14 | 0°C | 75°C | 85 K |
| 269-A-130-F1480-A | 1480 nm pump laser module. A - nonisolated,SMF. Operating power 130 mW. A = no connector. | distributor | Butterffly package | 14 | 0°C | 75°C | 85 K |
| 269-A-140-F1480-A | 1480 nm pump laser module. A - nonisolated,SMF. Operating power 140 mW. A = no connector. | distributor | Butterffly package | 14 | 0°C | 75°C | 85 K |
| IRF140 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| IRF140SMD | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| MGF1403B | Low noise GaAs fet | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 166 K |
| MGF1423B | Small signal GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 261 K |
| MRF140 | RF power field-effect transistor | Motorola | - | 4 | - | - | 163 K |
| MRF141 | RF power field-effect transistor | Motorola | - | 4 | - | - | 160 K |
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