| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F1510 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 36 K |
| F1516 | 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| F1520 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
| F1535 | 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
| MRF150 | 150 W, N-channel MOS linear RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 183 K |
| MRF151 | 150 W, N-channel MOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 215 K |
| MRF151G | 300 W, 50 V, N-channel broadband RF power MOSFET | M-A-COM---manufacturer-of-RF | - | 5 | - | - | 250 K |
| MRF154 | 600 W, 50 V, N-channel broadband RF power MOSFET | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 175 K |
| MRF157 | 600 W, MOS linear RF power FET | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 190 K |
| MRF158 | 600 W, 50 V, TMOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 493 K |
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