Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MBM29F160BE-55PFTN | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | - | 48 | -20°C | 70°C | 577 K |
MBM29F160BE-70PFTN | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 577 K |
MBM29F160TE-55PFTN | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | - | 48 | -20°C | 70°C | 577 K |
MBM29F160TE-55PFTR | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | - | 48 | -20°C | 70°C | 577 K |
MBM29F160TE-70PFTN | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 577 K |
MBM29F160TE-70PFTR | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 577 K |
MBM29F160TE-90PFTN | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 577 K |
MBM29F160TE-90PFTR | Flash memory CMOS 16M (2M x 8/1 x 16)bit | Fujitsu-Microelectronis | - | 48 | -40°C | 85°C | 577 K |
MRF160 | Power field effect transistor | Motorola | - | 4 | - | - | 122 K |
MRF166C | RF power field effect transistor | Motorola | - | 6 | - | - | 111 K |
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