| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MRF160 | 4 W, 28 V, MOSFET broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 416 K |
| MRF16006 | 6 W, 1.6 GHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 142 K |
| MRF16030 | 30 W, 1.6 GHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 133 K |
| MRF166C | 20 W, 500 MHz, MOSFET broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 6 | - | - | 178 K |
| MRF166W | 40 W, 500 MHz, TMOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 5 | - | - | 206 K |
| MX29F1610A | 16M-bit (2M x 8/1M x 16) CMOS single voltage flash EEPROM | distributor | TSOP | 48 | 0°C | 70°C | 669 K |
| MX29F1610A | 16M-bit (2M x 8/1M x 16) CMOS single voltage flash EEPROM | distributor | SOP | 44 | 0°C | 70°C | 669 K |
| MX29F1615 | 16M-bit (2M x 8/1M x 16) CMOS single voltage flash EEPROM | distributor | PDIP | 42 | 0°C | 70°C | 337 K |
| SF161A | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=125degC | distributor | - | 4 | -65°C | 150°C | 26 K |
| SST34HF1681-70-4E-L1P | 16 Mbit concurrent superflash + 8 Mbit SRAM combomemory | Silicon-Storage-Technology-Inc- | LFBGA | 56 | -20°C | 85°C | 472 K |
| << [65] [66] [67] [68] [69] 70 [71] [72] [73] [74] [75] >> |
|---|
