| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4F160411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 225 K |
| K4F160412D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 225 K |
| K4F160811D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
| K4F160811D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
| K4F160812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
| K4F160812D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
| LH28F160BGB-BTL12 | 16M-bit(1MB x 16)smart 3 Flash Memory | Sharp | CSP | 60 | 0°C | 70°C | 225 K |
| LH28F160BGB-TTL10 | 16M-bit(1MB x 16)smart 3 Flash Memory | Sharp | CSP | 60 | 0°C | 70°C | 225 K |
| LH28F160BGB-TTL12 | 16M-bit(1MB x 16)smart 3 Flash Memory | Sharp | CSP | 60 | 0°C | 70°C | 225 K |
| LH28F160SGED-L10 | 16M-bit(512KB x 16 x 2-bank)smart vpltage dual work Flash Memory | Sharp | TSOP | 48 | -10°C | 70°C | 252 K |
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