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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4F160411D-B4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.Samsung-ElectronicSOJ240°C70°C225 K
K4F160411D-F4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.Samsung-Electronic-260°C70°C225 K
K4F160411D-F4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.Samsung-Electronic-240°C70°C225 K
K4F160412D-B4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.Samsung-ElectronicSOJ240°C70°C225 K
K4F160412D-F4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.Samsung-Electronic-260°C70°C225 K
K4F160412D-F4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.Samsung-Electronic-240°C70°C225 K
MGF1601BMicrowave power GaAs fetMitsubishi-Electric-Corporation-Semiconductor-Group-3--26 K
PD90F1601600V Thyristor moduleSanRex-Sansha-Electric-Mfg--Co--Ltd--6-40°C125°C625 K
PE90F1601600V Thyristor moduleSanRex-Sansha-Electric-Mfg--Co--Ltd--6-40°C125°C625 K
PK90F1601600V Thyristor moduleSanRex-Sansha-Electric-Mfg--Co--Ltd--7-40°C125°C625 K
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