| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ACT-D1M96S-020F20C | High speed 3.3 Volt 96 Megabit synchronous DRAM multichip module. Speed 20ns. | distributor | CQFP | 200 | 0°C | 70°C | 105 K |
| ACT-D1M96S-020F20M | High speed 3.3 Volt 96 Megabit synchronous DRAM multichip module. Speed 20ns. | distributor | CQFP | 200 | -55°C | 110°C | 105 K |
| ACT-D1M96S-020F20T | High speed 3.3 Volt 96 Megabit synchronous DRAM multichip module. Speed 20ns. | distributor | CQFP | 200 | -55°C | 110°C | 105 K |
| C8051F206 | Mixed-signal 8KB ISP flash MCU | distributor | - | 48 | -40°C | 85°C | 48 K |
| F2001 | 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| F2002 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| F2003 | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F2004 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| F2012 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 37 K |
| MX29F200BTA-12 | Access time: 120ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | distributor | TSOP | 48 | -40°C | 85°C | 720 K |
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