| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RF2103P | Medium power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 14 | -40°C | 85°C | 191 K |
| RF2103PPCBA | Medium power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 14 | -40°C | 85°C | 191 K |
| RF2104PCBA-H | 915MHz Medium power amplifier | RF-Micro-Devices-RFMD | CJ2BATO | 16 | -40°C | 85°C | 112 K |
| RF2104PCBA-L | 830MHz Medium power amplifier | RF-Micro-Devices-RFMD | CJ2BATO | 16 | -40°C | 85°C | 112 K |
| RF2105L | High power linear UNF amplifier | RF-Micro-Devices-RFMD | QLCC | 16 | -40°C | 85°C | 70 K |
| RF2105LPCBA | High power linear UNF amplifier | RF-Micro-Devices-RFMD | QLCC | 16 | -40°C | 85°C | 70 K |
| RF2115L | High power UNF amplifier | RF-Micro-Devices-RFMD | QLCC | 16 | -40°C | 85°C | 101 K |
| RF2115LPCBA | High power UNF amplifier | RF-Micro-Devices-RFMD | QLCC | 16 | -40°C | 85°C | 101 K |
| RF2125P | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 51 K |
| RF2125PPCBA | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 51 K |
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