| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM28F256A-120PEB | 256 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 456 K |
| AM28F256A-150PEB | 256 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 456 K |
| AM28F256A-200PE | 256 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 456 K |
| AM28F256A-70PE | 256 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 456 K |
| AM28F256A-70PE | 256 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 456 K |
| AM28F256A-70PEB | 256 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 456 K |
| AM28F256A-90PE | 256 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 456 K |
| AM28F256A-90PEB | 256 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 456 K |
| IRF250 | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| IRF250SMD | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 23 K |
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