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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF3709LHEXFET power MOSFET. VDSS = 30V, RDS(on) = 9.0 mOhm, ID = 90AInternational-Rectifier-3-55°C150°C121 K
IRF3710HEXFET power MOSFET. VDSS = 100V, RDS(on) = 23 mOhm, ID = 57AInternational-Rectifier-3-55°C175°C94 K
IRF3710LHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57AInternational-Rectifier-3-55°C175°C184 K
IRF3710SHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57AInternational-RectifierDDPak3-55°C175°C184 K
IRF3710SHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57AInternational-RectifierDDPak3-55°C175°C184 K
IRF3711HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110AInternational-Rectifier-3-55°C150°C245 K
IRF3711LHEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110AInternational-Rectifier-3-55°C150°C245 K
IRF3711SHEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110AInternational-RectifierDDPak3-55°C150°C245 K
SF37-TBReverse voltage: 600.00V; 3.0A super-fast rectifierdistributor-2-65°C125°C47 K
SF37-TBReverse voltage: 600.00V; 3.0A super-fast rectifierdistributor-2-65°C125°C47 K
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