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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
DF451161600V fast recovery diodedistributor---40°C125°C56 K
IF4500N-Channel silicon junction field-effect transistordistributor-3--62 K
IF4501N-Channel silicon junction field-effect transistordistributor-4--91 K
IF4510N-Channel silicon junction field-effect transistordistributor-3--62 K
IF4511N-Channel silicon junction field-effect transistordistributor-4--92 K
IRF450Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12AInternational-Rectifier-3-55°C150°C144 K
MRF45480 W, 30 MHz, RF power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--90 K
MRF45560 W, 30 MHz, RF power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--92 K
RN5RF45BCLow ripple voltage regulator with external transistor. Output voltage 4.5V. Chip enable active type H. Antistatic bagdistributor-5-40°C85°C134 K
RN5RF45BCLow ripple voltage regulator with external transistor. Output voltage 4.5V. Chip enable active type H. Antistatic bagdistributor-5-40°C85°C134 K
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