| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF530 | N-channel MOSFET, 100V, 14A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRF530 | N-channel MOSFET, 100V, 14A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 187 K |
| IRF530F1 | N-channel MOSFET, 100V, 9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 187 K |
| IRF531 | N-channel MOSFET, 80V, 14A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRF531 | N-channel MOSFET, 80V, 14A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 187 K |
| IRF531F1 | N-channel MOSFET, 80V, 9A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 187 K |
| IRF532 | N-channel MOSFET, 100V, 12A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 187 K |
| IRF532F1 | N-channel MOSFET, 100V, 8A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 187 K |
| IRF533 | N-channel MOSFET, 80V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRF533 | N-channel MOSFET, 80V, 12A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 187 K |
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