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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K9F5608Q0B-DCB032M x 8 bit NAND flash memory, 1.7 - 1.95VSamsung-ElectronicTBGA630°C70°C604 K
K9F5608Q0B-DIB032M x 8 bit NAND flash memory, 1.7 - 1.95VSamsung-ElectronicTBGA63-40°C85°C604 K
K9F5608Q0B-HCB032M x 8 bit NAND flash memory, 1.7 - 1.95VSamsung-ElectronicTBGA630°C70°C604 K
K9F5608Q0B-HIB032M x 8 bit NAND flash memory, 1.7 - 1.95VSamsung-ElectronicTBGA63-40°C85°C604 K
K9F5608U0B-FCB032M x 8 bit NAND flash memory, 2.7 - 3.6VSamsung-ElectronicWSOP1480°C70°C604 K
K9F5608U0B-VCB032M x 8 bit NAND flash memory, 2.7 - 3.6VSamsung-ElectronicWSOP1480°C70°C604 K
K9F5608U0B-VIB032M x 8 bit NAND flash memory, 2.7 - 3.6VSamsung-ElectronicWSOP148-40°C85°C604 K
K9F5608U0B-YCB032M x 8 bit NAND flash memory, 2.7 - 3.6VSamsung-ElectronicTSOP I480°C70°C604 K
N74F569D5.5 V, 4-bit bidirectional binary synchronous counterPhilips-SemiconductorsSO200°C70°C130 K
N74F569N5.5 V, 4-bit bidirectional binary synchronous counterPhilips-SemiconductorsDIP200°C70°C130 K
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