Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
1F60A-120F | Fast recovery diode module for snuber diode applications | distributor | R101 | 2 | - | - | 94 K |
1F60A-120R | Fast recovery diode module for snuber diode applications | distributor | R101 | 2 | - | - | 94 K |
D1F60A | General purpose rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | 1F | - | - | - | 317 K |
DBF60T | Diffused junction silicon diode, 6A single-phase bridge rectifier | SANYO-Electric-Co--Ltd- | 1191 | 4 | - | - | 43 K |
F606 | PNP epitaxial silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2120 | 6 | - | - | 106 K |
F607 | PNP epitaxial silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2120 | 6 | - | - | 108 K |
UF600A | Ultrafast silicon rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 38 K |
UF600B | Ultrafast silicon rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 38 K |
UF600D | Ultrafast silicon rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 38 K |
UF600G | Ultrafast silicon rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 38 K |
[1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
---|