| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CEBF640 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -55°C | 150°C | 507 K |
| CEDF640 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 505 K |
| CEFF640 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -55°C | 150°C | 464 K |
| CEUF640 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 505 K |
| DA28F640J5-150 | Intel StrataFlash memory 64 Mbit. Access speed 150 ns | Intel-Corporation | SSOP | 56 | 0°C | 70°C | 641 K |
| G28F640J5-150 | Intel StrataFlash memory 64 Mbit. Access speed 150 ns | Intel-Corporation | microBGA | 56 | 0°C | 70°C | 641 K |
| K4F640412D-JC/L | 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 367 K |
| K4F640412D-TC/L | 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 367 K |
| K4F640812D-JC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 368 K |
| K4F640812D-TC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 368 K |
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