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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
E28F640J3A-120StrataFlash memory, x8/x16 (64 Mbit), Vcc=3V, 120nsIntel-CorporationTSOP56-25°C85°C380 K
K4F640811B-TC-458M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45nsSamsung-ElectronicTSOP II320°C70°C367 K
K4F640811B-TC-508M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50nsSamsung-ElectronicTSOP II320°C70°C367 K
MT28F640J3FS-1132Mb Q-flash memorydistributorFBGA640°C70°C548 K
MT28F640J3FS-11ET32Mb Q-flash memorydistributorFBGA640°C70°C548 K
NX25F640C-3T3 V, 64M-bit flash memory with 4-pin SPI interfacedistributorTSOP320°C70°C353 K
NX25F640C-3T-R3 V, 64M-bit flash memory with 4-pin SPI interfacedistributorTSOP320°C70°C353 K
NX26F640C-3T3 V, 64M-bit flash memory with 2-pin NXS2 interfacedistributorTSOP320°C70°C366 K
NX26F640C-3T-R3 V, 64M-bit flash memory with 2-pin NXS2 interfacedistributorTSOP320°C70°C366 K
RC28F640J3A-120StrataFlash memory, x8/x16 (64 Mbit), Vcc=3V, 120nsIntel-CorporationBGA64-25°C85°C380 K
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