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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4F661612B-TC454M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45nsSamsung-ElectronicTSOP II500°C70°C844 K
K4F661612B-TC504M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50nsSamsung-ElectronicTSOP II500°C70°C844 K
K4F661612B-TC604M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60nsSamsung-ElectronicTSOP II500°C70°C844 K
K4F661612B-TL454M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low powerSamsung-ElectronicTSOP II500°C70°C844 K
K4F661612B-TL504M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low powerSamsung-ElectronicTSOP II500°C70°C844 K
K4F661612B-TL604M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low powerSamsung-ElectronicTSOP II500°C70°C844 K
K4F661612C-TL454M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low powerSamsung-ElectronicTSOP II500°C70°C844 K
STR-F6612SMPS primary IC, 400V, 60WSanken-Electric-Co--5-20°C125°C191 K
STR-F6614SMPS primary IC, 400V, 125WSanken-Electric-Co--5-20°C125°C191 K
STR-F6616SMPS primary IC, 400V, 190WSanken-Electric-Co--5-20°C125°C191 K
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