| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GMF71020 | 200 A fast recovery diode module | distributor | - | - | - | - | 75 K |
| IRF710 | 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 56 K |
| MGF7124A | 1.9 GHz band amplifier MMIC | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -20°C | 90°C | 9 M |
| MGF7124A | 1.9 GHz band amplifier MMIC | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -20°C | 90°C | 9 M |
| MGF7168C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -30°C | 85°C | 77 K |
| MGF7169C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -30°C | 85°C | 351 K |
| MGF7170C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -30°C | 85°C | 316 K |
| MGF7175C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 20 | -30°C | 85°C | 22 K |
| MGF7176C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 20 | -30°C | 85°C | 22 K |
| N74F712AN | Multiplexers | Philips-Semiconductors | SOT222 | - | - | - | 132 K |
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