Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF7807D1 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 165 K |
IRF7807D2 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 134 K |
IRF7807V | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 159 K |
IRF7807VD1 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 117 K |
IRF7807VD2 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 115 K |
IRF7809A | HEXFET chipset for DC-DC converter. VDS = 30V, RDS(on) = 8.5mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
IRF7809A | HEXFET chipset for DC-DC converter. VDS = 30V, RDS(on) = 8.5mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
IRF7809AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 7.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 114 K |
IRF7811A | HEXFET chipset for DC-DC converter. VDS = 28V, RDS(on) = 12mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 128 K |
IRF7811AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 11mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 86 K |
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