| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF821 | PNP high-voltage transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 50 K |
| BF823 | PNP high-voltage transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 50 K |
| BF824 | PNP medium frequency transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 45 K |
| BF824W | PNP medium frequency transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 47 K |
| IRF821 | N-channel MOSFET, 450V, 2.5A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
| IRF821 | N-channel MOSFET, 450V, 2.5A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
| IRF821FI | N-channel MOSFET, 450V, 2.0A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
| IRF823 | N-channel MOSFET, 450V, 2.2A | SGS-Thomson-Microelectronics | - | 3 | -55°C | 150°C | 341 K |
| IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
| IRF823FI | N-channel MOSFET, 450V, 1.5A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -55°C | 150°C | 341 K |
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