| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BF820 | NPN high-voltage transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 49 K |
| BF820W | NPN high-voltage transistor. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | 61 K |
| IRF820 | N-channel MOSFET, 500V, 2.5A | Motorola | - | 3 | -55°C | 150°C | 140 K |
| IRF820 | N-channel MOSFET, 500V, 2.5A | Samsung-Electronic | - | 3 | -55°C | 150°C | 322 K |
| IRF820 | N-channel enhancement mode power MOS transistor, 500V, 3.0A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 169 K |
| IRF820B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 858 K |
| IRF820FI | N-channel enhancement mode power MOS transistor, 500V, 2.2A | SGS-Thomson-Microelectronics | ISOWATT220 | 3 | -65°C | 150°C | 169 K |
| MPF820 | N-channel JFET, 25V | Motorola | - | 3 | -65°C | 150°C | 113 K |
| MURF820 | 8.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 103 K |
| SRF820 | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 8.0 A. | distributor | - | 2 | -65°C | 125°C | 150 K |
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