| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF830 | 500 V, Power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 58 K |
| IRF830 | 500 V, 4.5 A, power field effect transistor | distributor | TO | 3 | -55°C | 150°C | 282 K |
| IRF830AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 155 K |
| IRF830S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A | International-Rectifier | - | 3 | -55°C | 150°C | 175 K |
| KF836FU | Cellular Phone | Korea-Electronics-Co--Ltd- | - | - | - | - | 443 K |
| KF836U | Cellular Phone | Korea-Electronics-Co--Ltd- | - | - | - | - | 130 K |
| N74F835D | 5.5 V, 8-bit shift register | Philips-Semiconductors | SOL | 24 | 0°C | 70°C | 61 K |
| N74F835N | 5.5 V, 8-bit shift register | Philips-Semiconductors | DIP | 24 | 0°C | 70°C | 61 K |
| SF83R | Super fast rectifier. Case negative Maximum recurrent peak reverse voltage 150 V. Maximum average forward rectified current 8.0 A. | distributor | - | 3 | -65°C | 150°C | 165 K |
| SRF830 | Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 8.0 A. | distributor | - | 2 | -65°C | 125°C | 150 K |
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