Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MH16S72BCFA-8 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 958 K |
MH16S72DCFA-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 942 K |
MH16S72DCFA-6 | 1207959552-bit (16777216-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 958 K |
MH16S72DCFA-7 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 924 K |
MH16S72DCFA-8 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 924 K |
MH32S72BBFA-8 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 964 K |
MH32S72DBFA-7 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 941 K |
MH32S72DBFA-8 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 941 K |
MH64S72BAFA-7 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 778 K |
MH64S72BAFA-8 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 778 K |
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