| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRG4BC20FD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 222 K |
| M38049FD-SP | RAM size: 2048bytes; single-chip 8-bit CMOS microcomputer | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 64 | -20°C | 85°C | 1 M |
| M38049FD-SP | RAM size: 2048bytes; single-chip 8-bit CMOS microcomputer | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 64 | -20°C | 85°C | 1 M |
| MH8S72BBFD-7 | 603979776-bit synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 733 K |
| MH8S72BBFD-8 | 603979776-bit synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 733 K |
| MT28F160A3FD-11T | 1Meg x 16 page flash; 0.9-2.2V enhanced boot block flash memory | distributor | FBGA | 46 | 0°C | 70°C | 337 K |
| MT28F160A3FD-11TET | 1Meg x 16 page flash; 0.9-2.2V enhanced boot block flash memory | distributor | FBGA | 46 | 0°C | 70°C | 337 K |
| MT28F160A3FD-9T | 1Meg x 16 page flash; 0.9-2.2V enhanced boot block flash memory | distributor | FBGA | 46 | 0°C | 70°C | 337 K |
| MT28F160A3FD-9TET | 1Meg x 16 page flash; 0.9-2.2V enhanced boot block flash memory | distributor | FBGA | 46 | 0°C | 70°C | 337 K |
| MT28F160C34FD-9TET | 1Meg x 16; 3V enhanced + boot bolck flash memory | distributor | FBGA | 46 | -40°C | 85°C | 341 K |
| MT28F160C3FD-11TET | 1Meg x 16; 3V enhanced + boot bolck flash memory | distributor | FBGA | 46 | -40°C | 85°C | 341 K |
| << [11] [12] [13] [14] [15] 16 [17] [18] [19] [20] [21] >> |
|---|
