Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CMFD2004I | Dual isolated high voltage switching diode | distributor | SOT | 4 | -65°C | 150°C | 80 K |
FD2000BV-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 72 K |
FD2000DU-120 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 48 K |
IRFD210 | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.60 A | International-Rectifier | - | 4 | -55°C | 150°C | 173 K |
IRFD214 | HEXFET power MOSFET | International-Rectifier | - | 4 | -55°C | 150°C | 497 K |
IRFD220 | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 0.80 A | International-Rectifier | - | 4 | -55°C | 150°C | 175 K |
IRFD224 | HEXFET power MOSFET | International-Rectifier | - | 4 | -55°C | 150°C | 467 K |
SVFD21H335M | Resign molded chip fuse built-in | NEC-Electronics-Inc- | - | - | - | - | 142 K |
SVFD21V475M | Resign molded chip fuse built-in | NEC-Electronics-Inc- | - | - | - | - | 142 K |
VHFD29-08IO1 | 800V half controlled single phase rectifier bridge | distributor | - | 10 | -40°C | 125°C | 85 K |
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