Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
FDS2570 | 150V N-Channel PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 8 | - | - | 232 K |
FDS2670 | 200V N-Channel PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 8 | - | - | 339 K |
FDS3570 | 80V N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 250 K |
FDS3580 | N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 201 K |
FDS3590 | 80V N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 204 K |
FDS3670 | 100V N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 204 K |
FDS3680 | 100V N-Channel PowerTrench ® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 202 K |
FDS3680 | 100V N-Channel PowerTrench ® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 202 K |
FDS3690 | 100V N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | SOIC | 8 | - | - | 208 K |
FDS4410 | Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 8 | - | - | 241 K |
1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
---|