| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 79C0408RT1FH12 | 4 megabit (512k x 8-bit) EEPROM MCM | distributor | Flatpack | 40 | -55°C | 125°C | 361 K |
| 79C0408RT2FH12 | 4 megabit (512k x 8-bit) EEPROM MCM | distributor | Flatpack | 40 | -55°C | 125°C | 361 K |
| 79C0408RT4FH12 | 4 megabit (512k x 8-bit) EEPROM MCM | distributor | Flatpack | 40 | -55°C | 125°C | 361 K |
| 79C0408RT4FH15 | 4 megabit (512k x 8-bit) EEPROM MCM | distributor | Flatpack | 40 | -55°C | 125°C | 361 K |
| DFH10T | Diffused junction type silicon diode, power rectifier | SANYO-Electric-Co--Ltd- | 1175 | 2 | - | - | 54 K |
| FH102 | NPN epitaxial planar silicon composite transistor, high-frequency low-noisw amp, differential amp application | SANYO-Electric-Co--Ltd- | MCP6 | 6 | - | - | 66 K |
| RFH10N45 | 10.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET FN1629.2 | Intersil-Corporation | - | - | - | - | 32 K |
| RFH10N50 | 10.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET FN1629.2 | Intersil-Corporation | - | - | - | - | 32 K |
| RFH12N35 | 12.0A, 350V and 400V, 0.380 ohm, N-Channel Power MOSFET FN1630.2 | Intersil-Corporation | - | - | - | - | 40 K |
| RFH12N40 | 12.0A, 350V and 400V, 0.380 ohm, N-Channel Power MOSFET FN1630.2 | Intersil-Corporation | - | - | - | - | 40 K |
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