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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
79C0408RT1FH124 megabit (512k x 8-bit) EEPROM MCMdistributorFlatpack40-55°C125°C361 K
79C0408RT2FH124 megabit (512k x 8-bit) EEPROM MCMdistributorFlatpack40-55°C125°C361 K
79C0408RT4FH124 megabit (512k x 8-bit) EEPROM MCMdistributorFlatpack40-55°C125°C361 K
79C0408RT4FH154 megabit (512k x 8-bit) EEPROM MCMdistributorFlatpack40-55°C125°C361 K
DFH10TDiffused junction type silicon diode, power rectifierSANYO-Electric-Co--Ltd-11752--54 K
FH102NPN epitaxial planar silicon composite transistor, high-frequency low-noisw amp, differential amp applicationSANYO-Electric-Co--Ltd-MCP66--66 K
RFH10N4510.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET FN1629.2Intersil-Corporation----32 K
RFH10N5010.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET FN1629.2Intersil-Corporation----32 K
RFH12N3512.0A, 350V and 400V, 0.380 ohm, N-Channel Power MOSFET FN1630.2Intersil-Corporation----40 K
RFH12N4012.0A, 350V and 400V, 0.380 ohm, N-Channel Power MOSFET FN1630.2Intersil-Corporation----40 K
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