Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GS840FH18AT-10 | 10ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 634 K |
GS840FH18AT-8 | 8ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 634 K |
GS840FH18AT-8.5 | 8.5ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 634 K |
IXFH12N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 99 K |
IXFH12N50F | 500V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 303 K |
IXFH12N90Q | 900V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 85°C | 54 K |
IXFH15N100Q | 1000V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 142 K |
IXFH15N80Q | 800V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 111 K |
IXFH16N90Q | 900V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 72 K |
IXFH180N20 | 200V HiPerFET power MOSFET single die MOSFET | distributor | - | 4 | -55°C | 150°C | 71 K |
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