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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
RFM10N4510.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFETIntersil-Corporation----31 K
RFM10N5010.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFETIntersil-Corporation----31 K
RFM12N1812.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFETIntersil-Corporation----35 K
RFM12N2012.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFETIntersil-Corporation----35 K
RFM12N3512.0A, 350V and 400V, 0.500 ohm, N-Channel Power MOSFETIntersil-Corporation----31 K
RFM12N4012.0A, 350V and 400V, 0.500 ohm, N-Channel Power MOSFETIntersil-Corporation----31 K
RFM18N1018.0A, 80V and 100V, 0.100 ohm, N-Channel Power MOSFETIntersil-Corporation----38 K
ST333S04MFM1LInverter grade thyristorInternational-Rectifier-2-40°C125°C402 K
ST333S04PFM1LInverter grade thyristorInternational-Rectifier-2-40°C125°C402 K
ST333S08MFM1LInverter grade thyristorInternational-Rectifier-2-40°C125°C402 K
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