| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FS3KM-16A | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 43 K |
| FS3KM-18A | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 46 K |
| FS3SM-16A | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 42 K |
| FS3SM-18A | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 42 K |
| FS3UM-16A | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 41 K |
| FS3UM-18A | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 41 K |
| FS3VS-16A | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 40 K |
| FS3VS-18A | 3A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 40 K |
| IRFS31N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 190 K |
| IRFS33N15D | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 139 K |
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