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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M29FT800FPCMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupSOP44-40°C85°C151 K
M5M29FT800FP-10CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupSOP44-40°C85°C151 K
M5M29FT800FP-12CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupSOP44-40°C85°C151 K
M5M29FT800FP-80CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupSOP44-40°C85°C151 K
M5M29FT800RV-10CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FT800RV-80CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C151 K
M5M29FT800VP-10CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-40°C85°C151 K
M5M29FT800VP-12CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-40°C85°C151 K
M5M29FT800VP-80CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-40°C85°C151 K
VFT80-28VHF power MOSFET N-channel enhancement modeAdvanced-Semiconductor-Inc--4-65°C200°C18 K
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