| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M5V416BWG-10L | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | 0°C | 70°C | 107 K |
| M5M5V816WG-10H | 8388608-bit (524288-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | 0°C | 70°C | 87 K |
| M5M5V816WG-10HI | 8388608-bit (524288-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -40°C | 85°C | 87 K |
| M5M5V816WG-10L | 8388608-bit (524288-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | 0°C | 70°C | 87 K |
| M5M5V816WG-10LI | 8388608-bit (524288-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -40°C | 85°C | 87 K |
| MH4S64BLG-10 | 2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 586 K |
| MH4S72BLG-10 | 301989888-bit (4194304-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 587 K |
| MH8S64BBKG-10 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 144 | 0°C | 70°C | 578 K |
| MH8S64BBKG-10L | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 144 | 0°C | 70°C | 578 K |
| MH8S64BMG-10 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 588 K |
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