| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M5V416BWG-10H | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | 0°C | 70°C | 107 K |
| M5M5V416BWG-10HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10HW | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 107 K |
| M5M5V416BWG-10LI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10LI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -40°C | 85°C | 107 K |
| M5M5V416BWG-10LW | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | -20°C | 85°C | 107 K |
| MH4S64BBKG-10 | 268435456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 144 | 0°C | 70°C | 576 K |
| MH4S64BBKG-10L | 268435456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 144 | 0°C | 70°C | 576 K |
| MH8S72BMG-10 | 603979776-bit (8388608-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 589 K |
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