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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M51R16AWG-10H1048576-bit (65536-word by 16-bit) CMOS static SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP480°C70°C84 K
M5M51R16AWG-10HI1048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupCSP480°C70°C89 K
M5M51R16AWG-10LI1048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupCSP480°C70°C89 K
M5M51R16AWG-12HI1048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupCSP480°C70°C89 K
M5M5W816WG-10H8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-480°C70°C87 K
M5M5W816WG-10HI8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C87 K
M5M5W816WG-10L8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-480°C70°C87 K
M5M5W816WG-10LI8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C87 K
MH8S64BBKG-10268435456-bit (4194304-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1440°C70°C576 K
MH8S64BBKG-10L268435456-bit (4194304-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1440°C70°C576 K
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