| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M51R16AWG-12LI | 1048576-bit (65536-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | 0°C | 70°C | 89 K |
| M5M51R16AWG-15HI | 1048576-bit (65536-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | 0°C | 70°C | 89 K |
| M5M51R16AWG-15LI | 1048576-bit (65536-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | 0°C | 70°C | 89 K |
| MH1S72CPG-10 | 75497472-bit (1048576-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 681 K |
| MH1S72CPG-12 | 75497472-bit (1048576-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 681 K |
| MH1S72CPG-15 | 75497472-bit (1048576-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 681 K |
| MH28D72KLG-10 | 9663676416-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 184 | 0°C | 70°C | 337 K |
| MH4S64BLG-10 | 268435456-bit synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 586 K |
| ORLI10G-1BM416 | ORCA quad line 2.5 Gbits/s, 10 Gbits/s and 12.5 Gbits/s interface FPSC | distributor | PBGAM | 416 | -40°C | 85°C | 1 M |
| TG-100 | 38 KV two electrode high-energy spark gap | distributor | - | 2 | - | - | 195 K |
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