| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HN27C256AG-10 | 256K (32K x 8-bit) UV and OTP EPROM, 100ns | distributor | CERDIP | 28 | 0°C | 70°C | 416 K |
| HN27C256AG-10 | 256K (32K x 8-bit) UV and OTP EPROM, 100ns | distributor | CERDIP | 28 | 0°C | 70°C | 416 K |
| KM6264BLG-10 | 8K x 8 bit CMOS static RAM, 100ns, low power | Samsung-Electronic | SOP | 28 | 0°C | 70°C | 152 K |
| KM6264BLG-10L | 8K x 8 bit CMOS static RAM, 100ns, low low power | Samsung-Electronic | SOP | 28 | 0°C | 70°C | 152 K |
| KM684000G-10 | 512Kx8 bit CMOS static RAM, 100ns | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 344 K |
| KM684000LG-10 | 512Kx8 bit CMOS static RAM, 100ns | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 344 K |
| KM684000LG-10L | 512Kx8 bit CMOS static RAM, 100ns, low power | Samsung-Electronic | SOP | 32 | 0°C | 70°C | 344 K |
| uPD43256G-10 | 32768 x 8-bit static MIX-MOS RAM, 100ns | NEC-Electronics-Inc- | SOP | 28 | 0°C | 70°C | 434 K |
| uPD43256G-10L | 32768 x 8-bit static MIX-MOS RAM, 100ns, low power | NEC-Electronics-Inc- | SOP | 28 | 0°C | 70°C | 434 K |
| uPD70116HG-10-22 | 16-bit MOS microprocessor, 10MHz | NEC-Electronics-Inc- | PQFP | 52 | -40°C | 85°C | 5 M |
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