| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M51R16AWG-10H | 1048576-bit (65536-word by 16-bit) CMOS static SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | 0°C | 70°C | 84 K |
| M5M51R16AWG-10L | 1048576-bit (65536-word by 16-bit) CMOS static SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | 0°C | 70°C | 84 K |
| M5M5W816WG-10H | 8388608-bit (524288-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 48 | 0°C | 70°C | 87 K |
| MH4S64BBKG-10L | 268435456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 144 | 0°C | 70°C | 576 K |
| MH4S64BKG-10 | 2684354456-bit (4194304-word by 64-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 144 | 0°C | 70°C | 572 K |
| MH4S64BKG-10L | 2684354456-bit (4194304-word by 64-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 144 | 0°C | 70°C | 572 K |
| MH4S64BLG-10 | 268435456-bit (4194304-word by 64-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 578 K |
| MH4S72BLG-10 | 301989888-bit (4194304-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 587 K |
| MH64D72KLG-10 | 4831838208-bit (67108864-word by 72-bit) double date rate synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 326 K |
| MH8S72BMG-10 | 603979776-bit (8388608-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 589 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
|---|
