| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BFG17A | 25 V, NPN 3 GHz wideband transistor | Philips-Semiconductors | SOT | 4 | - | - | 60 K |
| BFG17A | 25 V, NPN 3 GHz wideband transistor | Philips-Semiconductors | SOT | 4 | - | - | 60 K |
| G1735 | Active area size:1.3x1.3mm; reverse voltage:5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification | distributor | - | 2 | -30°C | 80°C | 176 K |
| G1736 | Active area size:2.7x2.7mm; reverse voltage:5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification | distributor | - | 2 | -30°C | 80°C | 176 K |
| G1737 | Active area size:5.6x5.6mm; reverse voltage:5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification | distributor | - | 2 | -30°C | 80°C | 176 K |
| G1738 | Active area size:1.3x1.3mm; reverse voltage:5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification | distributor | Ceramic | 2 | -30°C | 80°C | 176 K |
| G17WDC-DC12 | Relay. Nominal voltage 12VDC. Resistance(+-10%) 130W. Contact material AgMeO1. Contact arrangement: 1 form W. Dust cover. | distributor | - | 7 | -40°C | 85°C | 63 K |
| G17WDC-DC24 | Relay. Nominal voltage 24VDC. Resistance(+-10%) 520W. Contact material AgMeO1. Contact arrangement: 1 form W. Dust cover. | distributor | - | 7 | -40°C | 85°C | 63 K |
| G17WDS-DC12 | Relay. Nominal voltage 12VDC. Resistance(+-10%) 130W. Contact material AgMeO2. Contact arrangement: 1 form W. Dust cover. | distributor | - | 7 | -40°C | 85°C | 63 K |
| G17WDS-DC24 | Relay. Nominal voltage 24VDC. Resistance(+-10%) 520W. Contact material AgMeO2. Contact arrangement: 1 form W. Dust cover. | distributor | - | 7 | -40°C | 85°C | 63 K |
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