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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BFG17A25 V, NPN 3 GHz wideband transistorPhilips-SemiconductorsSOT4--60 K
BFG17A25 V, NPN 3 GHz wideband transistorPhilips-SemiconductorsSOT4--60 K
G17ADS-DC24Relay. Nominal voltage 24VDC. Resistance(+-10%) 520W. Contact material AgMeO2. Contact arrangement: 1 form A. Dust cover.distributor-4-40°C85°C63 K
G17ADS-DC24Relay. Nominal voltage 24VDC. Resistance(+-10%) 520W. Contact material AgMeO2. Contact arrangement: 1 form A. Dust cover.distributor-4-40°C85°C63 K
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