Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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LNG250RFR | Square Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
LNG250RFR | Square Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
LNG250RKR | Square Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
LNG251CBA | GaAlAs Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 29 K |
LNG251RKR | Square Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 30 K |
LNG252RFR | Square Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
LNG252RKR | Square Type visible light emitting diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 32 K |
MG25Q2YS40 | Silicon N-channel IGBT GTR module for high power switching, chopper applications | Toshiba | - | 3 | - | - | 262 K |
MG25Q6ES51 | Silicon N-channel IGBT GRT module for high power switching, motor control applications | Toshiba | - | 17 | - | - | 261 K |
MG25Q6ES51 | Silicon N-channel IGBT GRT module for high power switching, motor control applications | Toshiba | - | 17 | - | - | 261 K |
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