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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C139 K
IRG4BC30W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12AInternational-RectifierDDPak3-55°C150°C188 K
IRG4BC40Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27AInternational-Rectifier-3-55°C150°C167 K
IRG4BC40KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25AInternational-Rectifier-3-55°C150°C156 K
IRG4BC40SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31AInternational-Rectifier-3-55°C150°C157 K
IRG4BC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20AInternational-Rectifier-3-55°C150°C169 K
IRG4BC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20AInternational-Rectifier-3-55°C150°C169 K
IRG4BC40WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20AInternational-Rectifier-3-55°C150°C129 K
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