| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BYG50D | Controlled avalanche rectifier. Repetitive peak reverse voltage 200 V. | Philips-Semiconductors | SOD106 | 2 | -65°C | 175°C | 62 K |
| BYG50G | Controlled avalanche rectifier. Repetitive peak reverse voltage 400 V. | Philips-Semiconductors | SOD106 | 2 | -65°C | 175°C | 62 K |
| BYG50J | Controlled avalanche rectifier. Repetitive peak reverse voltage 600 V. | Philips-Semiconductors | SOD106 | 2 | -65°C | 175°C | 62 K |
| BYG50K | Controlled avalanche rectifier. Repetitive peak reverse voltage 800 V. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 62 K |
| BYG50K | Controlled avalanche rectifier. Repetitive peak reverse voltage 800 V. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 62 K |
| BYG50K | Controlled avalanche rectifier. Repetitive peak reverse voltage 800 V. | Philips-Semiconductors | SOD106 | 2 | -65°C | 175°C | 62 K |
| BYG50M | Controlled avalanche rectifier. Repetitive peak reverse voltage 1000 V. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 62 K |
| BYG50M | Controlled avalanche rectifier. Repetitive peak reverse voltage 1000 V. | Philips-Semiconductors | - | 2 | -65°C | 175°C | 62 K |
| BYG50M | Controlled avalanche rectifier. Repetitive peak reverse voltage 1000 V. | Philips-Semiconductors | SOD106 | 2 | -65°C | 175°C | 62 K |
| MG50Q2YL1 | NPN transistor for high power switching and notor control applications, 1200V, 50A | distributor | - | 7 | -40°C | 125°C | 299 K |
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