| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ADG620BRM | 13V; CMOS +-5V/+5V, 4OHm SPDT switch. For outomatic test equipment, power routing, communication systems, data acquisition systems, etc. | Analog-Devices | SOIC | 8 | -40°C | 85°C | 145 K |
| ADG620BRT | 13V; CMOS +-5V/+5V, 4OHm SPDT switch. For outomatic test equipment, power routing, communication systems, data acquisition systems, etc. | Analog-Devices | - | 8 | -40°C | 85°C | 145 K |
| ADG620BRT | 13V; CMOS +-5V/+5V, 4OHm SPDT switch. For outomatic test equipment, power routing, communication systems, data acquisition systems, etc. | Analog-Devices | - | 8 | -40°C | 85°C | 145 K |
| ADG621BRM | 13V; CMOS +-5V/+5V, 4OHm dual SPDT switch. For outomatic test equipment, power routing, communication systems, data acquisition systems, etc. | Analog-Devices | SOIC | 10 | -40°C | 85°C | 141 K |
| ADG623BRM | 13V; CMOS +-5V/+5V, 4OHm dual SPDT switch. For outomatic test equipment, power routing, communication systems, data acquisition systems, etc. | Analog-Devices | SOIC | 10 | -40°C | 85°C | 141 K |
| DG626BH25 | 2000A, 2500V gate turn-off thyristor | distributor | - | 2 | -40°C | 125°C | 220 K |
| G6262 | Active area size:0.8x0.8mm; reverse voltage:5V; GaAsP photodiode. Short-wavelength type photodiode. For analytical instruments, UV detection | distributor | Plastic | 3 | -30°C | 80°C | 148 K |
| HG62E08 | 0.3-6.7 V, master slice CMOS gate array | distributor | DILP | 40 | -20°C | 75°C | 1 M |
| HG62E11 | 0.3-6.7 V, master slice CMOS gate array | distributor | DILP | 40 | -20°C | 75°C | 1 M |
| HG62E15 | 0.3-6.7 V, master slice CMOS gate array | distributor | DILP | 40 | -20°C | 75°C | 1 M |
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